| PART |
Description |
Maker |
| SIDC04D60F6 SIDC04D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| 1N4448HWT-7 1N4448HWT-13 |
SURFACE MOUNT FAST SWITCHING DIODE
Switching Diodes
|
Diodes Incorporated
|
| 1N74 1N60D 1N68A 1N96A 1N72 1N73 1N93 1N63 1N61 1N |
Diode Switching 100V 10A 2-Pin
Diode Switching 50V 3A 2-Pin Case A
GOLD BOUNDED GERMANUM DIODE
Diode Small Signal Switching 75V 0.3A Automotive 2-Pin DO-35 T/R
Diode Switching 125V 0.0003A 2-Pin DO-35
Diode Switching 50V 0.005A 2-Pin Case H
GOLD BONDED GERMANIUM DIODES
|
New Jersey Semiconductor
|
| IKA10N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| BAS20-7-F BAS21-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| 1N4148W-7-F BAV16W-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.15 A, 100 V, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| MMBD4448W-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.25 A, 75 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| BAV16WS-7-F 1N4148WS-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.15 A, 75 V, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| 1N4448WS-7-F |
SURFACE MOUNT FAST SWITCHING DIODE 0.25 A, 75 V, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
